Atomistic calculation of elastic moduli in strained silicon
نویسندگان
چکیده
منابع مشابه
Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate
We discuss boron diffusion in biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created strain in silicon by adding a germanium mole fraction to the silicon in order to perform a theoretical analysis. The strain energy of the charged defects was calculated from ab-initio calculation whereas the diffusivity of boron was extracted from the Arrhenius formul...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2006
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/21/7/014